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Nano News & Events
Nova and imec Developed Innovative Scatterometry Approach for Self-aligned Quadruple Patterning (SAQP) Process Control
Nano-electronics research center Imec and Nova Measuring Instruments, a leading innovator and key provider of metrology solutions for advanced process control used in semiconductor manufacturing,...
NanoViricides, Inc. (the "Company") announced today that information on its novel, proprietary anti-virus platform technology has been published in the book "Handbook of Clinical...
Parvus Therapeutics today announced the publication in Nature of a seminal paper describing the discovery and applications of a novel therapeutic approach employing nanomedicines, referred to as...
The 2-D material device designed and fabricated by Aalto University's researchers may prove useful in wearable electronics and sensors.Read more about Promising results obtained with a new and simpler way to fabricate graphene componentComments
Teijin Limited announced today that it received a Life Nanotechnology Award at the nano tech 2016 International Nanotechnology Exhibition and Conference, which took place at Tokyo Big Sight in Tokyo,...
Thomas Swan Team up with Plessey And DelStar International to Develop Commercial Applications for Graphene
Government grants awarded to leading Graphene manufacturer in top class development partnerships. Thomas Swan is pleased to announce the recent award of additional Innovate UK funding for two new...
<?xml version="1.0" encoding="UTF-8"?> Photo: Dan Hixson/University of Utah College of Engineering Researchers at the University of Utah have developed the first stable intrinsic p-type (carrying positive charges) 2-D semiconductor material, tin oxide. If this semiconductor is mated with a n-type (carrying electrons) 2-D semiconductor in a transistor, it opens up the possibility of building power-saving two-dimensional complementary logic circuits like the ones in microprocessors today. "Now we have everything—we have p-type 2-D semiconductors and n-type 2-D semiconductors," said Ashutosh Tiwari, an associate professor at the University of Utah and the leader of the research, in a press release. "Now things will move forward much more quickly." The potential for 2-D materials—such as graphene and molybdenum disulfide—as an alternative to the three-dimensional silicon, raises hopes for smaller, faster, lower-power transistors. However, the path to success for these 2-D materials in transistors has not always been clear, whether it be issues such as graphene not being a natural semiconductor or the charge carrier traps that compromise molybdenum disulfide. But possibly the biggest issue has been that all previous 2-D materials have only been stable n-type semiconductors. It has been possible to dope other 2-D materials, such as molybdenum disulfide and tungsten diselenide, to behave as p-type. However, this new tin oxide represents the first intrinsic p-type semiconductor in a 2D material. In research described in the journal Advanced Electronic Materials , the Utah University researchers overcame this limitation by layering 2-D tin oxide (SnO) onto a sapphire-and-silicon-dioxide (SiO2) substrate. The researchers were then able to fabricate a few field-effect transistors (FETs) from it. With this development, the attractive properties of 2-D materials in transistors are more fully exploitable. For instance, in 2-D materials charge transport is basically confined to a single plane, meaning electrical and thermal transport properties that can be much better than those of bulk silicon. That could mean chips that consume less power and throw-off less heat. In an e-mail interview, Tiwari said that the next step in their research will be to build a CMOS (complementary metal oxide semiconductor) using their new p-type 2-D semiconductor. This post was corrected on 18 February to indicate that some 2-D materials could act as p-type semiconductors when doped.
Printed Electronics WorldGraphene leans on glass to advance electronicsPrinted Electronics World"Developing and characterizing the devices required complex nanofabrication, delicate transfer of the atomically thin graphene onto rough substrates, detailed structural and electro-optical characterization, and also the ability to grow the CIGS ...and more »
The University of California, Riversides Bourns College of Engineering recently announced its partnership with Pearson to create a new online degree program in engineering, with specializations in bi...