Nano News & Events

Ultra-fast, ultra-sensitive platinum selenide gas sensors

InterNano Industry News - March 30, 2017 - 3:45am
Researchers have demonstrated ultrafast and highly sensitive gas sensors using platinum selenide. This material - a transition metal dichalcogenide (TMD) - has promising potential in different areas of nanoelectronics, including optoelectonics as well as sensing.
Categories: Nanotechnology News

U.S. EPA finalizes reporting and record keeping requirements on nanoscale materials

InterNano Industry News - March 30, 2017 - 3:45am
For the first time, EPA is using TSCA to collect existing exposure and health and safety information on chemicals currently in the marketplace when manufactured or processed as nanoscale materials.
Categories: Nanotechnology News

Disposable biosensors made from newspaper

InterNano Industry News - March 28, 2017 - 3:45am
Paper, probably the cheapest and most widely used flexible and eco-friendly material in daily life, is a promising substrate for making flexible devices ranging from electronics to microfluidics, energy storage and sensors. In new work, researchers have developed a new and reliable method to achieve conformal coating of individual cellulose fibers in the paper and the fabrication of a metal electrode via patterning of gold and silver layers on the coated paper.
Categories: Nanotechnology News

Molybdenum-Disulfide 2D Transistors Go Ballistic

InterNano Industry News - March 28, 2017 - 3:45am
<?xml version="1.0" encoding="UTF-8"?> 2D nanomaterial pulls ahead with working registers and latch circuits and devices that let electrons zip through unimpeded Image: Stanford University Molybdenum disulfide, a two dimensional semiconductor that’s just 3 atoms thick, has had a big year. In October, a group of researchers made a 1-nanometer transistor from the material, showing that even if silicon transistors stop shrinking, the new material might provide a path forward. In December, at the IEEE International Electron Devices Meeting in San Francisco, researchers presented work they say shows that molybdenum disulfide not only makes for superlative single transistors, but can be made into complex circuits using realistic manufacturing methods. At the meeting, a group from Stanford showed that transistors made from large sheets of MoS2 can be used to make transistors with 10-nanometer-long, gate having electronic properties that approach the material’s theoretical limits. The devices displayed traits close to ballistic conduction, a state of very low electrical resistance that allows the unimpeded flow of charge over relatively long distances—a phenomenon that should lead to speedy circuits. Separately, a team from MIT demonstrated complex circuit elements made from MoS2 transistors. Most of the work on molybdenum disulfide so far has been what Stanford electrical engineer Eric Pop calls “Powerpoint devices.” These one-off devices, made by hand in the lab, have terrific performance that looks great in a slide. This step is an important one, says Pop, but the 2D material is now maturing. Image: Stanford University The Stanford lab’s transistors are not as small as the record-breaking ones demonstrated in October. What’s significant, says group leader Pop, is that these latest transistors maintained similar performance even though they were made using more industrial-type techniques. Instead of using Scotch tape to peel off a layer of molybdenum disulfide from a rock of the material, then carefully placing it down and crafting one transistor at a time, Pop’s grad student started by growing a large sheet of the material on a wafer of silicon. In a transistor, a gate electrode switches the semiconductor channel between conducting and insulating states. In the Stanford device, the tricky part was coming up with an easy way to make a small gate atop the molybdenum disulfide without harming it, says Pop. That is, until his student, Christopher English, realized they could harness the power of rust. English chose a somewhat unusual material, aluminum, to serve as the gate electrode. He deposited a 20-nanometer finger of aluminum on the molybdenum, then allowed it to oxidize and shrink down to a smaller size. The gate ends up being about 10 nanometers. At these relatively small dimensions, the molybdenum disulfide transistors approach their ultimate electrical limit, a state called ballistic conduction. When a device is small enough (or at low enough temperature), electrons will travel through the conducting medium without scattering because of collisions with the atoms that make up the material. Transistors operating ballistically should switch very fast and enable high-performance processors. Pop estimates that about 1 in 5 electrons moves though the rusty transistors ballistically. By further improving the quality of the material (or making the transistors smaller), he expects that ratio to improve. The important thing, he says, is the way they achieved this: using methods that could translate to larger scales. “We have all the ingredients we need to scale this up,” says Pop. Zippy nanoscale transistors are great on their own, but they’re useful only if you can build them into circuits.  Researchers from MIT demonstrated just that by constructing working registers and latches. They managed the feat, says electrical engineer Dina El-Damak, by creating computer-aided design software tailored to MoS2. This sort of software is common in the silicon world and enables designers to come up with new circuits relatively easily. (El-Damak worked on the molybdenum disulfide project at MIT and is now a professor at the University of Southern California in Los Angeles.) Since molybdenum disulfide is so new, not many circuit designers have worked with the material. So far, most work has been done by trial and error, one device at a time. The MIT group can create an informed circuit design, using their computer models to simulate the best and worst cases, based on the material’s known properties and the performance of previous devices, says El-Damak. Then the group fabricates the design that seems most likely to work, tests its performance, and feeds the results back into the program. “By doing this, we have more confidence in scaling up this technology,” she says. Both Pop and El-Damak say molybdenum disulfide is unlikely to be a direct replacement for silicon. The material will either be used to build complementary systems on top of silicon chips, or it will be used on its own in flexible, transparent electronics. It’s also possible that some other 2D semiconductor will end up being a better option. Molybdenum disulfide is a few steps ahead because researchers have worked with it more than, say, tungsten selenide, and know how to grow the material over large areas. The Stanford and MIT research demonstrates important progress in this field, says Deji Akinwande, an electrical engineer at the University of Texas at Austin who co-chaired the IEDM session on 1D and 2D devices. People who work in industry are always asking when these materials will be made into useful circuits, and now it’s happening, he says. “Industry is starting to take this more seriously, now that it’s no longer just the grad student in the basement working on it,” he says.
Categories: Nanotechnology News

Efficient nanowire solution for a big-name pollutant

InterNano Industry News - March 28, 2017 - 3:45am
Researchers designed an extremely efficient catalytic system to remove carbon monoxide.
Categories: Nanotechnology News

Imec and Besi Demonstrate Long-Term Reliability of Ni-Cu-Ag Plated Solar Modules

InterNano Industry News - March 24, 2017 - 3:45am
Drunen (The Netherlands) and Leuven (Belgium)—January 3, 2017—Today, the world-leading research and innovation hub in nano-electronics, energy and digital technology imec (partner in...
Categories: Nanotechnology News

Responsive filtration membranes by polymer self-assembly

InterNano Industry News - March 24, 2017 - 3:45am
A new review article discusses recent developments in stimuli-responsive membranes with an emphasis on membranes manufactured by polymer self-assembly.
Categories: Nanotechnology News

Controlling the organizational behavior of nanoparticles with polymers

InterNano Industry News - March 24, 2017 - 3:45am
By harnessing the intrinsic organizational properties of polymeric tethers, nanoparticles can be programmed to self-assemble into a variety of micron-sized domain structures in a reversible way.
Categories: Nanotechnology News

Three-layer nanoparticle catalysts improve zinc-air batteries

InterNano Industry News - March 24, 2017 - 3:45am
Nanoparticles containing three different layers of material can help to boost the performance of a zinc-air battery, researchers have found.
Categories: Nanotechnology News

Silver nanowire inks enable paper-based printable electronics

InterNano Industry News - March 24, 2017 - 3:45am
By suspending tiny metal nanoparticles in liquids, scientists are brewing up conductive ink-jet printer 'inks' to print inexpensive, customizable circuit patterns on just about any surface.
Categories: Nanotechnology News

Black gold maximizes the light absorption of nanomaterials

InterNano Industry News - March 24, 2017 - 3:45am
Maximizing light absorption of nanomaterials has been an emerging research field in the recent years due to its attractiveness in a wide range of applications that involves conversion or utilization of solar energy. However, most of the concepts reported are based on multi-layered architecture inspired by optical impedance matching concepts that requires complicated non-scalable fabrication process such as electron beam lithography. Efforts on maximizing light absorption via nanostructuring remain scarce. Researchers have now reported such a material - a nanolayer of black gold.
Categories: Nanotechnology News

Large-yield synthesis of 2D antimonene nanocrystals

InterNano Industry News - March 22, 2017 - 3:45am
Following up on previous theoretical predictions, researchers now have demonstrated two high-yield methods for fabricating antimonenes - wide-band-gap semiconductors that under strain become direct band-gap semiconductors. Such dramatic transitions of electronic properties could open a new door for nanoscale transistors with high on/off ratio, blue/UV optoelectronic devices, and nanomechanical sensors based on new ultrathin semiconductors. The new approach is generic for various transparent conducting oxides as well as other oxide nanocrystal inks.
Categories: Nanotechnology News

Grant will support development of flexible electronics at UMass ... - Plastics News

InterNano Industry News - March 22, 2017 - 3:45am
Plastics NewsGrant will support development of flexible electronics at UMass ...Plastics NewsResearchers from the UMass Lowell Nanomanufacturing Center and Raytheon Integrated Defense Systems are using a $1.89 million Nextflex grant to advance ...NextFlex awards $1.9m to UMass Lowell - The Boston GlobeThe Boston Globeall 2 news articles »
Categories: Nanotechnology News

2016 National Nanotechnology Initiative Strategic Plan

InterNano Industry News - March 22, 2017 - 3:45am
Whitman, Lloyd J. and Henderson, Lori A. and Meador, Michael A. and Friedersdorf, Lisa E. and Standridge, Stacey and Thomas, Treye and Howard, John and Biaggi-Labiosa, Azlin M. and Madsen, Lynnette D. and Cannizzaro, Chris and Jillavenkatesa, Ajit and Bobalek, John F.. National Science and Technology Council, Office of Science and Technology Policy, Nanoscale Science, Engineering, and Technology Subcommittee. (2016) 2016 National Nanotechnology Initiative Strategic Plan. Technical Report. United States National Nanotechnology Initiative. (Unpublished)
Categories: Nanotechnology News

MIT awarded UNESCO Medal for contributions to nanoscience and nanotechnologies

InterNano Industry News - March 22, 2017 - 3:45am
MIT has been honored with the UNESCO Medal for contributions to the development of nanoscience and nanotechnologies by the United Nations Educational, Scientific and Cultural Organization (UNESCO). Established in 2010, the UNESCO Medal has awarded over 30 prominent scientists and public figures for their individual contributions to advancing the fields of nanoscience and nanotechnologies. This year MIT shares the distinction, along with St. Petersburg State University of Information Technologies in Russia, of being the first organization to be recognized. In addition to the two universities, four eminent scientists from Korea, the United Arab Emirates, Ukraine, and the United Kingdom, were recipients of the medal. An awards ceremony was held on Oct. 11 at the UNESCO headquarters in Paris, France. Institute Professor Mildred (Millie) Dresselhaus, a nanoscience pioneer who herself has won many recognitions including the U.S. Presidential Medal of Freedom and the L'Oreal-UNESCO Award for Women in Science, made the trip at the invitation of President Rafael Reif to accept the medal on behalf of MIT. “Using science and technology as a way to bring people together is something MIT has learned to do really well,” says Dresselhaus. “Our faculty, staff, and students come together from countries all over the world with diverse technical backgrounds to work across the many academic departments and laboratories on campus. This culture of interdisciplinary collaboration enables us to work for common goals, so it made sense to me that MIT was recognized as an institution. This should serve as encouragement to move forward as rapidly as possible to complete MIT.nano and to achieve some exceptionally great outcomes through this initiative as it comes to fruition.” The award will eventually be displayed within the public spaces of MIT.nano — the 214,000-square-foot center for nanoscience and nanotechnology that is currently under construction in the heart of the MIT campus — after the building opening in June 2018, says Vladimir Bulović, faculty lead of the project. The UNESCO Medal is an initiative of the International Commission responsible for developing the Encyclopedia of Life Support Systems theme on nanoscience and nanotechnologies. Each year, the medal recognizes those making significant contributions in the field in an effort to showcase the tremendous benefits of progress being made. MIT joins a distinguished group of scientists who have received the medal thus far, including Nobel Prize-winners in physics Zhores Alferov and Isamu Akasaki.
Categories: Nanotechnology News

An economical solution for the removal of selenium contaminants in wastewater

InterNano Industry News - March 22, 2017 - 3:45am
Selenium (Se) is a metalloid element found in trace amounts in the earth’s crust and which has found extensive application due to its semiconducting properties. The use in photocopiers, microelectronic circuits and other applications has created a demand which makes selenium a valuable element. Selenium also shows biological activity with a strong dependence on concentration: it is essential in low doses for mammalian organisms but becomes strongly toxic to humans over a certain intake threshold. Efficient removal of selenium from wastewater being discharged in the environment is imperative and the development of cost-effective procedures to achieve this needs to be addressed. Under typical environmental conditions Se can be found in a variety of oxidation states (-II, 0, IV, and VI). The former two are insoluble and give rise to little toxicity on account of their low mobility in aqueous phases. The latter two however are found as highly mobile oxyanions which are the principal targets for Se removal. Finding the right reagent Ling et al have used an established strategy involving the reduction of Se(IV) to the insoluble Se(0) form, but their choice of nanoscale zero-valent iron (nZVI) as the reagent has led to a superior method of wastewater decontamination being developed. As little as 0.2 g L-1 nZVI can achieve over 99% removal of high levels of Se(IV) within 5 hours. Additionally, on account of the magnetic properties of the nZVI its recovery could be achieved simply with the use of a magnet, leaving pure elemental selenium as the product. The potential for elemental selenium recovery and recycling provides grounding for the method becoming cost-neutral or even profitable. Furthermore, in depth studies were conducted to elucidate the pathway taken by the decontamination process, with attention focused on the nano- and microstructure of the resulting Se particles and of the nZVI before and after reaction. The nZVI particles consist of a metallic iron core surrounded by an oxide layer which under aqueous conditions is capable of performing adsorption of Se oxyanions, thus paving the way for their reduction by the metallic core. Two types of Se structures result following the reductive process: almost perfectly spherical nanoparticles and nano-needles, both being attributed to known forms of elemental Se: amorphous and trigonal, respectively. A complete account of the Se(IV) reduction and Se(0) structure formation mechanisms operating in this process is available in the full article, free to view for a limited time:* Genesis of pure Se(0) nano- and micro-structures in wastewater with nanoscale zero-valent iron (nZVI) Environ. Sci.: Nano, 2016, Advance Article DOI: 10.1039/C6EN00231E About the webwriter Dan Mercea is a PhD student in the Fuchter group at Imperial College London. He is working on developing enantioselective FLP catalysis. —————- *Access is free until 9th December 2016 through a registered RSC account – register here                   
Categories: Nanotechnology News

Connecting two electrodes by liquid crystal-guided carbon nanotube wires

InterNano Industry News - March 22, 2017 - 3:45am
Carbon nanotubes (CNTs) being highly electrically conductive along the tube axis, have gained great research interests in recent years for connecting two conducting electrodes at the nanoscale - where the CNTs can be integrated into a micro- or nanoelectronic system. Therefore, the orientational control of CNTs has drawn a great deal of research interest in nanotechnology. Researchers now have developed a technique to bridge two electrical conductors by assembling CNTs guided by liquid crystals.
Categories: Nanotechnology News

Three UT Austin Professors Named Fellows of the National Academy of Inventors - UT News | The University of Texas at Austin

InterNano Industry News - March 16, 2017 - 3:45am
UT News | The University of Texas at AustinThree UT Austin Professors Named Fellows of the National Academy of InventorsUT News | The University of Texas at AustinSreenivasan has published more than 100 technical articles and holds more than 100 U.S. patents in the area of nanomanufacturing. He has received several awards for his work including the Technology Pioneer Award by the World Economic Forum (2005), ...and more »
Categories: Nanotechnology News

Nano-Nouvelle Trial Delivers Nanotech Breakthrough

InterNano Industry News - March 16, 2017 - 3:45am
A successful production trial by Australian battery technology innovator Nano-Nouvelle has proved its pioneering nanotechnology ­­­supports industrial-scale manufacture, with output rates...
Categories: Nanotechnology News